2N from Fairchild Semiconductor. Find the PDF Datasheet, Specifications and Distributor Information. 2N Datasheet PDF Download – NPN Transistoor, 2N data sheet. 2N datasheet, 2N pdf, 2N data sheet, datasheet, data sheet, pdf, Central Semiconductor, Leaded Small Signal Transistor General Purpose.

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Datadheet ratings’are from 50 to 1, volts for the 6 and 12 amp packages. New procurement specifications Procurement specifications on each of the above units are available in military format for designers and reliability engineers. The applica- tion literature listing has been repeated on the back of this card for your convenience.

2N Datasheet PDF –

PD is sold in minimum mill quantities datzsheet lbs. Retain highly uniform characteristics from batch to batch, making possible much closer tolerances in the design of small-signal, high-temperature and amplifier circuits. Kemet was first to bring you high-voltage solid tantalums60, and 75 volts — three big contributions in 2Vi years! M EIA-registered types come first, followed by 1 house-numbered types. This also permits quick identification of close sub- stitutes.

Under maximum ratings, manufacturers were asked to specify collector power dissipa- tion at 25 C case temperature, this general- ly being the most meaningful single dissipa- tion rating. For complete information, including performance data, on this noteworthy new alloy, send for Brochure K. HL29 2N P59 AJ, xatasheet pnp, AJ.


2n914 datasheet pdf

Collector saturation voltage is 0. Glass-to-metal seals are said to be eliminated by the package, whose lower beryllia surface provides a direct path from the semiconductor material to a chassis or heat sink. Datashdet years, the industry had been working to design high voltage silicon PNP transistors with the low leakage currents normally associated with NPN types, surface passivated by the planar process.

This insures interchangeability in practical communications circuits. AJ ,ge 65 65 pnp.

Full text of “Electronic Design 11th Annual Transistor Data Chart May 24, “

Stacked Rectifiers and Assemblies Custom designed stacked rectifiers are available up to 60 kv with currents up to 20 amp. Though initially devised for the pro- duction of high voltage silicon PNP transistors, there are strong indications that the Annular process yields major benefits for NPN and field effect tran- sistors and other semiconductor devices as well.

You can specify parameters, logic levels. These triple-duty resistors come in seven sizes— 2, 3, 5, 7, 10, 15 and 20 watts.

The tests may be pro- grammed in any order through an easy-to- use punch card system. T40 Electronic Design New from Honeywell! Electronics Park Syracuse 1, N. Silicon power tran- sistors with Vceo, Vcbo and Vces of and volts in two gain ranges.

Oxide-coated surface passivated units with working inverse voltages up to 1, volts. Motorola developed Annular process will take its place among the major milestones in the advancement of the semicon- ductor art.


Types 2N are avail- able in the T case, and types 2N are available in the TO- 18 case. Other fre- quencies available upon request. The channels are random in nature and erratic in characteristics, and can be highly sen- sitive to radiation bombardment. BoxScottsdale, Arizona. Within each category, types are arranged in order of increasing value of a key design parameter. AJ ,ge pnp,AJ,ge 0. HF28, 41,68 2N A8. Finally, it must be cautioned that the char- acteristics listed are primarily a guide and generally cannot be used for direct compari- son of types.

The major diameter is 0. Long Island City 6, N. Extremely low leakage as low as InA max. Dissipation ratings to watts, currents to 20 amperes. Electronic Design Transistors Potver switching Switching up to w in fxsecs is afforded by these amp, dif- fused alloy, power transistors. You can have this kind of reliability in your military and commercial applications. They can be used effec- tively in short-wave converters, medium wave converters and all high frequency applications.